document number: 64701 www.vishay.com s09-1401-rev. a, 27-jul-09 1 automotive n-channel 20 v (d-s) 175 c mosfet sqd50n02-04 vishay siliconix features ? halogen-free according to iec 61249-2-21 definition ? trenchfet ? power mosfet ? package with low thermal resistance ? aec-q101 qualified d ? compliant to rohs directive 2002/95/ec ? find out more about vishay?s automotive grade product requirements at: www.vishay.com/applications notes a. package limited. b. pulse test; pulse width 300 s, duty cycle 2 %. c. when mounted on 1" square pcb (fr-4 material). d. parametric verification ongoing. product summary v ds (v) 20 r ds(on) ( ) at v gs = 10 v 0.0043 r ds(on) ( ) at v gs = 4.5 v 0.006 i d (a) 50 configuration single n -channel mosfet g d s to-252 s gd top view drain connected to tab ordering information package to-252 lead (pb)-free and halogen-free SQD50N02-04-GE3 absolute maximum ratings t c = 25 c, unless otherwise noted parameter symbol limit unit drain-source voltage v ds 20 v gate-source voltage v gs 20 continuous drain current a t c = 25 c i d 34 a t c = 100 c 50 continuous source current (diode conduction) a i s 8.3 pulsed drain current b i dm 100 single pulse avalanche energy l = 0.1 mh e as 65 mj single pulse avalanche current i as 36 a maximum power dissipation b t c = 25 c p d 8.3 w t a = 25 c 136 operating junction and storage temperature range t j , t stg - 55 to + 175 c thermal resistance ratings parameter symbol limit unit junction-to-ambient pcb mount c r thja 50 c/w junction-to-case (drain) r thjc 1.1
www.vishay.com document number: 64701 2 s09-1401-rev. a, 27-jul-09 sqd50n02-04 vishay siliconix notes a. pulse test; pulse width 300 s, duty cycle 2 %. b. guaranteed by design, not subj ect to production testing. c. independent of operating temperature. stresses beyond those listed under ?absolute maximum ratings? ma y cause permanent damage to the device. these are stress rating s only, and functional operation of the device at these or any other condit ions beyond those indicated in the operational sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended periods may affect device reliability. specifications t c = 25 c, unless otherwise noted parameter symbol test conditions min. typ. max. unit static drain-source breakdown voltage v ds v gs = 0 v, i d = 250 a 20 - - v gate-source threshold voltage v gs(th) v ds = v gs , i d = 250 a 0.8 - 3.0 gate-source leakage i gss v ds = 0 v, v gs = 20 v - - 100 na zero gate voltage drain current i dss v gs = 0 v v ds = 20 v - - 1.0 a v gs = 0 v v ds = 20 v, t j = 125 c - - 50 v gs = 0 v v ds = 20 v, t j = 175 c - - - on-state drain current a i d(on) v gs = 10 v v ds 5 v 50 - - a drain-source on-state resistance a r ds(on) v gs = 10 v i d = 20 a - 0.0035 0.0043 v gs = 10 v i d = 20 a, t j = 125 c - - 0.0061 v gs = 10 v i d = 20 a, t j = 125 c - - - v gs = 4.5 v i d = 20 a - 0.0048 0.006 forward transconductance a g fs v ds = 15 v, i d = 20 a 15 - - s dynamic b input capacitance c iss v gs = 0 v v ds = 10 v, f = 1 mhz - 5000 - pf output capacitance c oss - 1650 - reverse transfer capacitance c rss - 770 - total gate charge c q g v gs = 4.5 v v ds = 10 v, i d = 50 a -40- nc gate-source charge c q gs -14- gate-drain charge c q gd -13- turn-on delay time c t d(on) v dd = 10 v, r l = 0.2 i d ? 50 a, v gen = 10 v, r g = 2.5 -20- ns rise time c t r -20- turn-off delay time c t d(off) -50- fall time c t f -15- source-drain diode ratings and characteristics t c = 25 c b pulsed current a i sm - - 100 a forward voltage v sd i f = 50 a, v gs = 0 v - 0.9 1.5 v
document number: 64701 www.vishay.com s09-1401-rev. a, 27-jul-09 3 sqd50n02-04 vishay siliconix typical characteristics t a = 25 c, unless otherwise noted output characteristics transconductance capacitance transfer characteristics on-resistance vs. drain current gate charge 0 40 80 120 160 200 0.0 0.5 1.0 1.5 2.0 2.5 3.0 v ds - drain-to-source voltage (v) v gs = 10 v thru 5 v 3 v 4 v i d - drain current (a) 0 40 80 120 160 0 15304560 t c = - 55 c i d - drain current (a) t c = 25 c t c = 125 c g fs - transconductance (s) 0 1000 2000 3000 4000 5000 6000 7000 0 5 10 15 20 v ds - drain-to-source voltage (v) c - capacitance (pf) c rss c iss c oss 0 50 100 150 200 0123456 v gs - gate-to-source voltage (v) 25 c t c = 125 c i d - drain current (a) - 55 c 0.000 0.002 0.004 0.006 0.008 0.010 0 20406080100 i d - drain current (a) v gs = 10 v v gs = 4.5 v r ds(on) - on resistance ( ) 0 2 4 6 8 10 0 20406080 - gate-to-source voltage (v) q g - total gate charge (nc) v gs v ds = 10 v i d = 50 a
www.vishay.com document number: 64701 4 s09-1401-rev. a, 27-jul-09 sqd50n02-04 vishay siliconix typical characteristics t a = 25 c, unless otherwise noted on-resistance vs. junction temperature source drain diode forward voltage 0.6 0.8 1.0 1.2 1.4 1.6 1.8 - 50 - 25 0 25 50 75 100 125 150 175 t j - junction temperature (c) v gs = 10 v i d = 20 a r ds(on) - on-resistance (normalized) v sd - source-to-drain voltage (v) - source current (a) i s 100 1 0.3 0.6 0.9 1.2 1.5 t j = 25 c t j = 150 c 0 10
document number: 64701 www.vishay.com s09-1401-rev. a, 27-jul-09 5 sqd50n02-04 vishay siliconix thermal ratings t a = 25 c, unless otherwise noted maximum drain current vs. ambient temperature safe operating area normalized thermal transient impedance, junction-to-ambient note the characteristics shown in the graph. normalized transient thermal impedance juncti on to ambient (25 c) are given for genera l guidelines only to enable the user to get a ?ball park? indi cation of part capabilities. the data ar e extracted from single pulse transien t thermal impedance characteristics which are developed from empirical measurements. the latter is va lid for the part mounted on printed circuit bo ard - fr4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. the part capabilities can widely vary depending on actua l application parameters and operating conditions. vishay siliconix maintains worldwide manufacturing capability. pr oducts may be manufactured at one of several qualified locatio ns. reliability data for silicon technology and package reliability represent a composite of all qualified locations. for related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?64701 . 0 8 16 24 32 40 0 25 50 75 100 125 150 175 t c - case temperature (c) - drain current (a) i d - drain current (a) i d 1000 10 0.0 0.1 1 10 100 1 100 single pulse t a = 25 c 100 s 1 ms 10 ms 100 s, dc 10 s 100 ms 0.1 1 s 10 s limited by r ds(on)* v ds - drain-to-source voltage (v) *v gs > minimum v gs at which r ds(on) is specified square wave pulse duration (s) 2 0.1 0.01 normalized eff ective transient thermal impedance 0.2 0.1 0.02 0.05 single pulse duty cycle = 0.5 10 -4 10 -3 10 -2 10 -1 1 10 1000 100 1
document number: 91000 www.vishay.com revision: 18-jul-08 1 disclaimer legal disclaimer notice vishay all product specifications and data are subject to change without notice. vishay intertechnology, inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, ?vishay?), disclaim any and all liability fo r any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. vishay disclaims any and all li ability arising out of the use or application of any product describ ed herein or of any information provided herein to the maximum extent permit ted by law. the product specifications do not expand or otherwise modify vishay?s terms and conditions of purcha se, including but not limited to the warranty expressed therein, which apply to these products. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of vishay. the products shown herein are not designed for use in medi cal, life-saving, or life-sustaining applications unless otherwise expressly indicated. customers using or selling vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify vishay for any damages arising or resulting from such use or sale. please contact authorized vishay personnel to obtain written terms and conditions regarding products designed for such applications. product names and markings noted herein may be trademarks of their respective owners.
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